Long wavelength vertical cavity lasers
1999 (English)In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3625, no Bellingham, WA, United States, 304-314 p.Article in journal (Refereed) Published
We report on three novel vertical cavity laser (VCL) structures for 1.55 ÎŒm operation. Two of the VCL structures utilize an n-type GaInAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer-fusion or metamorphic epitaxial growth. The third VCL employs two wafer fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p-mirror. All three VCLs use strained GaInAsP quantum wells as active material and achieve continuous-wave (CW) operation at room-temperature or above. The single fused VCL operates up to 17 Â°C and 101 Â°C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reversed biased tunnel junction for current injection. This laser achieves record high output power (1mW) at room temperature and operates CW up to 45 Â°C. The double fused VCLs with a 10Ã—10 ÎŒm2 active area operate CW up to 30 Â°C with threshold current as low as 2.5 mA and series resistance of 30 Ohms. The emission spectra exhibit a single lasing mode polarized with 30 dB extinction ratio and a spectral linewidth of 150 MHz.
Place, publisher, year, edition, pages
San Jose, CA, USA, 1999. Vol. 3625, no Bellingham, WA, United States, 304-314 p.
Mirrors, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor device structures, Semiconductor quantum wells, Thermal effects, Long wavelength vertical cavity lasers, Semiconductor lasers
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83021OAI: oai:DiVA.org:kth-83021DiVA: diva2:502998
Sponsors: SPIE NR 201408052012-02-142012-02-122012-02-14Bibliographically approved