Change search
ReferencesLink to record
Permanent link

Direct link
Scanning capacitance microscopy investigations of buried heterostructure laser structures
Show others and affiliations
1999 (English)In: Applied Surface Science, ISSN 01694332 (ISSN), Vol. 144-145, no 0, 137-140 p.Article in journal (Refereed) Published
Abstract [en]

In this work, InP-based buried heterostucture lasers are used to demonstrate the utility of scanning capacitance microscopy (SCM) for characterising complex device structures. The lasers use p-n junctions formed by selective regrowth of p and n doped InP layers around a mesa for current confinement. For comparison, the regrowth was performed by liquid phase epitaxy (LPE) and metal organic vapour phase epitaxy (MOVPE). Our investigations show that scanning capacitance microscopy is capable of detecting the p-n junctions formed at different regions of the device and thereby allows visualisation of the current confinement regions. Variations in the imaged depletion regions are attributed to doping variations due to modification of the regrowth process by the mesa. The SCM data show significant differences between the devices regrown by LPE and MOVPE and the results are consistent with the different regrowth mechanisms. Finally, the implications of the SCM data on device performance are discussed. © 1999 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
1999. Vol. 144-145, no 0, 137-140 p.
Keyword [en]
Buried hetero-structure lasers, LPE, MOVPE, p-n Junctions, Regrowth, SCM, Capacitance, Electric currents, Heterojunctions, Liquid phase epitaxy, Metallorganic vapor phase epitaxy, Semiconducting indium phosphide, Semiconductor doping, Semiconductor growth, Semiconductor lasers, Buried heterostructure laser structures, Current confinement, Scanning capacitance microscopy, Selective regrowth, Scanning electron microscopy
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83018OAI: diva2:502999
References: Huang, Y., Williams, C.C., Wendman, M.A., (1996) J. Vac. Sci. Technol. B, 14, p. 1168; Kopanski, J.J., Marchiando, J.F., Lowney, J.R., (1996) J. Vacc, Sci. Technol. B, 14, p. 242; Edwards, H., McGlothlin, R., Martin, R.S., Elisa, U., Gribelyuk, M., Mahaffy, R., Shih, C.K., Ukraintsev, V.A., (1998) Appl. Phys. Lett., 72, p. 698; Tomiye, H., Yao, T., Kawami, H., Hayashi, T., (1996) Appl. Phys. Lett., 69, p. 4050; Öbergm, M., Nilsson, S., Struebel, K., Wallin, J., BÀckbom, L., Klinga, T., (1993) IEEE Photon. Technol. Lett., 5, p. 735; Hammar, M., Rodriguez Messmer, E., Luzuy, M., Anand, S., Lourdudoss, S., Landgren, G., (1998) Appl. Phys. Lett., 72, p. 815; Nordell, N., Borglind, J., (1991) J. Crystal Growth, 114, p. 92; Kondo, M., Anayama, C., Okada, N., Sekiguchi, H., Domen, K., Tanahashi, T., (1994) J. Appl. Phys., 76, p. 914 NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

Open Access in DiVA

No full text

Other links
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 27 hits
ReferencesLink to record
Permanent link

Direct link