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Systematics of electrical conductivity across InP to GaAs wafer-fused interfaces
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1999 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 38, no 2 B, 1111-1114 p.Article in journal (Refereed) Published
Abstract [en]

We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron. © 1999 Publication Board, Japanese Journal of Applied Physics.

Place, publisher, year, edition, pages
1999. Vol. 38, no 2 B, 1111-1114 p.
Keyword [en]
GaAs, Heterojunction, InP, Vertical cavity surface emitting lasers, Wafer fusion, Crystal impurities, Electric conductivity, Electric variables measurement, Interfaces (materials), Secondary ion mass spectrometry, Semiconducting films, Semiconducting gallium arsenide, Semiconducting indium phosphide, Semiconducting silicon, Semiconductor doping, Semiconductor lasers, Zinc, Current voltage measurement, Doping concentration, Impurity concentration, Heterojunctions
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83017OAI: diva2:503004

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Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2016-05-27Bibliographically approved

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