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Enhanced modulation bandwidth and self-pulsations in detuned loaded InGaAsP DBR-lasers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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1996 (English)In: Semiconductor Laser Conference, 1996., 15th IEEE International, 1996, 93-94 p.Conference paper, Published paper (Refereed)
Abstract [en]

A strong undamping of the relaxation peak leading to self-pulsations and a record high modulation bandwidth (26 GHz) were observed in 1.55 mu;m InGaAsP DBR QW lasers. These results are attributed to the mechanism of detuned loading

Place, publisher, year, edition, pages
1996. 93-94 p.
Keyword [en]
mu;m InGaAsP DBR lasers;1.55 mum;26 GHz;InGaAsP;detuned loaded InGaAsP DBR-lasers;detuned loading;enhanced modulation bandwidth;high modulation bandwidth;quantum well lasers;relaxation peak;self-pulsations;strong undamping;III-V semiconductors;distributed Bragg reflector lasers;electro-optical modulation;gallium arsenide;gallium compounds;indium compounds;infrared sources;laser transitions;laser tuning;quantum well lasers;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89291DOI: 10.1109/ISLC.1996.553763OAI: oai:DiVA.org:kth-89291DiVA: diva2:503005
Conference
IEEE International Semiconductor Laser Conference
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2012-02-14Bibliographically approved

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Schatz, Richard

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