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Near room-temperature continuous-wave operation of electrically pumped 1.55 ÎŒm vertical cavity lasers with InGaAsP/InP bottom mirror
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1999 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 35, no 1, 49-50 p.Article in journal (Refereed) Published
Abstract [en]

The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 Όm diameter device, the threshold current is 6mA and the input threshold power is 21mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively. © IEE 1999.

Place, publisher, year, edition, pages
1999. Vol. 35, no 1, 49-50 p.
Keyword [en]
Continuous wave lasers, Electric currents, Laser pulses, Mirrors, Semiconducting aluminum compounds, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Electrically pumped lasers, Threshold current, Quantum well lasers
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83019OAI: oai:DiVA.org:kth-83019DiVA: diva2:503008
Note

References: Piprek, J., High-temperature lasing of long-wavelength VCSELs: Problems and prospects (1997) Proc. SPIE, 3003, pp. 182-193; Uchiyama, S., Yokouchi, Y., Ninomiya, T., Continuous-wave operation up to 36°C of 1.3-Όm GaInAsP-InP vertical cavity lasers (1997) IEEE Photonics Technol. Lett., 9 (2), pp. 141-142; Margalit, N.M., Piprek, J., Zhang, S., Babic, D.I., Streubel, K., Mirin, R.P., Wesselman, J.R., Hu, E.L., 64°C continuous wave operation of 1.5 Όm vertical-cavity laser (1997) IEEE J. Sci. Topics Quantum Electron., 3 (2), pp. 359-365; Jayaraman, V., Geske, J.C., MacDougal, M.H., Peters, F.H., Lowes, T.D., Char, T.T., Uniform threshold current, continuous-wave, singlemode 1300nm vertical cavity lasers from 0 to 70°C (1998) Electron. Lett., 34 (14), pp. 1405-1406; Ohiso, Y., Amano, C., Itoh, Y., Tateno, K., Tadokoro, Takenouchi, H., Kurokawa, T., 1.55 Όm vertical-cavity surface-emitting lasers with wafer fused InGaAsP/InP-GaAs/AlAs DBRs (1996) Electron. Lett., 32 (16), pp. 1483-1485; Qian, Y., Zhu, Z.H., Lo, Y.H., Hoffaker, D.L., Deppe, D.G., Ho, H.Q., Hammons, B.E., Tou, Y.K., Submilliamp 1.3Όm vertical-cavity lasers with threshold current density of < 500A/cm2 (1997) Electron. Lett., 33 (12), pp. 1052-1054; Salet, P., Gabriot, F., Pagnod-Rossaiux, P.H., Plais, A., Deroum, E., Pasquier, J., Jacquet, J., Room-temperature pulsed operation of 1.3Όm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors (1997) Electron. Lett., 33 (24), pp. 1408-1409; Imayo, Y., Kasukawa, A., Kashwa, S., Okatomo, H., GaInAsP/ InP semiconductor multilayer reflector grown by metalorganic vapor phase deposition and its application to surface emitting laser diode (1990) Jpn. J. Appl. Phys., 29, pp. L1130-L1132; Fisher, M.A., Huag, Y.-Z., Dann, A.J., Elton, D.J., Harlow, M.J., Perrin, S.D., Reed, J., Adams, M.J., Pulsed electrrical operation of 1.5Όm vertical-cavity surface emitting lasers (1995) IEEE Photonics Technol. Lett., 29, pp. 608-610; Rapp, S., Streubel, K., Salomonsson, F., Bentell, J., Hammar, M., All epitaxial, single-fused 1.55Όm vertical cavity laser (1999) Jpn. J. Appl. Phys., 38 (1 B), p. 303. , Proc. 10th Int. Conf. Indium Phosphide and Related Materials (IPRM) '98, Tsukuba, Japan, 11-15 May 1997, to be published; Boucart, J., Starck, C., Plais, A., Deroum, E., Fortin, C., Gabroit, F., Pinquier, A., Jacquet, J., RT pulsed operation of metamorphic VCSEL at 1.55Όm (1998) Electron. Lett., 34 (22), pp. 2133-2135; Gebratsadik, H., Bhattacharya, P.K., Kamath, K.K., Qasimeh, O.R., Klotzkin, D.J., Caneau, C., Bhat, R., InP-based 1.5 Όm vertical cavity surface emitting laser with epitaxially grown defect free GaAs-based distributed Bragg reflectors (1998) Electron. Lett., 34 (13), pp. 1316-1317; Piprek, J., Wenzel, H., Wunsche, H.-J., Braun, D., Henneberger, F., Modeling light vs. current characteristics of long-wavelength VCSELs with various DBR materials (1995) Proc. SPIE, 2399, pp. 605-616; Enders, P., Piprek, J., Woerner, M., Intervalence band absorption in the AlGaAs mirror layers of long-wavelength vertical-cavity lasers (1997) Conf. Lasers and Electro-Optics, CLEO, , Baltimore; Salomonsson, F., Streubel, K., Bentell, J., Hammar, M., Keiper, D., Westphalen, R., Piprek, J., Behrend, J., Wafer fused p-InP/p-GaAs heterojunctions (1998) J. Appl. Phys., 83 (2), pp. 768-774 NR 20140805

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