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Near room-temperature continuous-wave operation of electrically pumped 1.55 ÎŒm vertical cavity lasers with InGaAsP/InP bottom mirror
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1999 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 35, no 1, 49-50 p.Article in journal (Refereed) Published
Abstract [en]

The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 Όm diameter device, the threshold current is 6mA and the input threshold power is 21mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively. © IEE 1999.

Place, publisher, year, edition, pages
1999. Vol. 35, no 1, 49-50 p.
Keyword [en]
Continuous wave lasers, Electric currents, Laser pulses, Mirrors, Semiconducting aluminum compounds, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Electrically pumped lasers, Threshold current, Quantum well lasers
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83019OAI: diva2:503008

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Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2016-05-27Bibliographically approved

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