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Improved spectral characteristics of MQW-DFB lasers by incorporation of multiple phase-shifts
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
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1995 (English)In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 13, 434-441 p.Article in journal (Refereed) Published
Abstract [en]

The single-mode stability of strained-layer MQW-DFB lasers with electron-beam written gratings containing zero, one and three phase-shifts, and with a relatively large coupling strength, has been investigated theoretically and experimentally. The fabricated lasers with the multiple phase-shifted (MPS) structure exhibited a higher degree of stability than the lambda;/4-shifted lasers, and a considerably improved stability for both categories with phase-shifts compared to the nonshifted lasers was obtained. These results were in good agreement with our simulations. An investigation of the linewidths of the phase-shifted lasers is also presented. The MPS lasers had a significantly lower linewidth floor (down to 600 kHz) than those with one phase-shift. There was no degradation of the side-mode suppression-ratio correlated to the linewidth floor or rebroadening. A possible explanation for the lower linewidth floors obtained for the MPS lasers is that this structure is less sensitive to inhomogeneous carrier fluctuations. Longitudinal fluctuations in the shape of the photon density distribution will thereby be suppressed

Place, publisher, year, edition, pages
1995. Vol. 13, 434-441 p.
Keyword [en]
lambda;/4-shifted lasers;InGaAsP-InP;InGaAsP-InP laser diode;MQW-DFB lasers;electron-beam written gratings;inhomogeneous carrier fluctuations;large coupling strength;linewidth floor;linewidths;multiple phase-shifted structure;multiple phase-shifts;phase-shifted lasers;photon density distribution;rebroadening;side-mode suppression-ratio;simulation;single-mode stability;spectral characteristics;stability;strained-layer MQW-DFB lasers;III-V semiconductors;distributed feedback lasers;electron beam applications;fluctuations;gallium arsenide;gallium compounds;indium compounds;laser modes;laser stability;quantum well lasers;spectral line breadth;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89285DOI: 10.1109/50.372439OAI: oai:DiVA.org:kth-89285DiVA: diva2:503016
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2017-12-07Bibliographically approved
In thesis
1. On the Stability and Dynamics of Semiconductor Lasers
Open this publication in new window or tab >>On the Stability and Dynamics of Semiconductor Lasers
1994 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 1994
Series
Trita-MVT, ISSN 0348-4467 ; 1994:1
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-89578 (URN)
Public defence
1994-09-15, Kollegiesalen, KTH, Drottning Kristinas Väg, Stockholm, 10:00 (English)
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Supervisors
Note

QC 20130201

Available from: 2013-02-01 Created: 2012-02-15 Last updated: 2013-02-04Bibliographically approved

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Schatz, Richard

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