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On the modulation bandwidth of semiconductor microcavity lasers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
1994 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 6, 1312-1314 p.Article in journal (Refereed) Published
Abstract [en]

The small signal injection current modulation bandwidth of vertical cavity microlasers in the conventional macroscopic regime and in the microscopic regime of "controlled spontaneous emission" is investigated. A microlaser, under constraint of nonlinear gain or current density limitations, is found to have the same intrinsic modulation bandwidth as conventional edge-emitting lasers with the same cavity losses and photon density.<>

Place, publisher, year, edition, pages
1994. Vol. 6, 1312-1314 p.
Keyword [en]
cavity losses;controlled spontaneous emission;conventional edge-emitting lasers;current density;intrinsic modulation bandwidth;microscopic regime;modulation bandwidth;nonlinear gain;photon density;semiconductor microcavity lasers;small signal injection current modulation bandwidth;vertical cavity microlasers;current density;laser cavity resonators;optical losses;optical modulation;semiconductor lasers;spontaneous emission;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89284DOI: 10.1109/68.334823OAI: oai:DiVA.org:kth-89284DiVA: diva2:503019
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2017-12-07Bibliographically approved

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Schatz, Richard

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