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The effect of stitching errors on the spectral characteristics of DFB lasers fabricated using electron beam lithography
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
1992 (English)In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 10, 1256-1266 p.Article in journal (Refereed) Published
Abstract [en]

Field stitching errors and their effect on the single-mode characteristics of distributed feedback (DFB) lasers fabricated using electron beam lithography were investigated. The stitching errors are associated with small-area, high-resolution electron beam exposure, which has the potential advantage of high-speed writing of laser gratings. Measurements show that the errors are composed of a systematic and a stochastic part. Their effect on the gain margin was simulated both for lambda;/4 phase-shifted and optimized multiple-phase-shifted DFB lasers. Simulations show that the lasers are insensitive to the systematic part of the stitching errors if the number of errors is large enough. The stochastic part was found to give rise to a variation in gain margin of the DFB lasers. It is concluded that the field stitching accuracy in the high-resolution mode of a commercial system for electron beam lithography is sufficient to provide a high yield of single-mode lasers. However, it is essential that certain precautions be taken considering exposure conditions and that a fault tolerant laser design be used

Place, publisher, year, edition, pages
1992. Vol. 10, 1256-1266 p.
Keyword [en]
Bragg grating;DFB lasers;InP-InGaAsP laser;electron beam lithography;fault tolerant laser design;gain margin;high-resolution electron beam exposure;high-speed writing;laser gratings;phase shifted lasers;simulation;single-mode characteristics;spectral characteristics;stitching errors;stochastic errors;systematic errors;III-V semiconductors;diffraction gratings;distributed feedback lasers;electron beam lithography;errors;gallium arsenide;gallium compounds;indium compounds;optical workshop techniques;semiconductor lasers;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89275DOI: 10.1109/50.156877OAI: oai:DiVA.org:kth-89275DiVA: diva2:503035
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2017-12-07Bibliographically approved
In thesis
1. On the Stability and Dynamics of Semiconductor Lasers
Open this publication in new window or tab >>On the Stability and Dynamics of Semiconductor Lasers
1994 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 1994
Series
Trita-MVT, ISSN 0348-4467 ; 1994:1
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-89578 (URN)
Public defence
1994-09-15, Kollegiesalen, KTH, Drottning Kristinas Väg, Stockholm, 10:00 (English)
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Supervisors
Note

QC 20130201

Available from: 2013-02-01 Created: 2012-02-15 Last updated: 2013-02-04Bibliographically approved

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Schatz, Richard

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