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All-epitaxial single-fused 1.55 ÎŒm vertical cavity laser based on an InP bragg reflector
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1999 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 38, no 2 B, 1261-1264 p.Article in journal (Refereed) Published
Abstract [en]

We have realised an all-epitaxial 1.55 Όm vertical cavity laser by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32-period p-doped (C) AlGaAs/GaAs top mirror onto a half-cavity structure consisting of a 50-period n-doped (Si) GaInAsP/InP bottom mirror and a 9 quantum well GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed at temperatures up to 40°C and at pulse lengths of 10 Όs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm2 for a device diameter of 55 Όm. Compared to nonoxidised laser diodes, the threshold current is markedly decreased in oxidised laser diodes. © 1999 Publication Board, Japanese Journal of Applied Physics.

Place, publisher, year, edition, pages
1999. Vol. 38, no 2 B, 1261-1264 p.
Keyword [en]
Distributed bragg reflectors, Long-wavelength lasers, Vertical-cavity lasers, Wafer fusion, Etching, Laser pulses, Photocurrents, Semiconducting gallium arsenide, Semiconducting indium phosphide, Semiconductor device structures, Semiconductor quantum wells, Distributed Bragg reflector, Vertical cavity laser, Semiconductor lasers
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83016OAI: diva2:503036

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Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2016-05-27Bibliographically approved

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