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Pure frequency modulation or intensity modulation with suppressed frequency chirp using active Bragg reflector integrated laser
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
1989 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 25, 304-305 p.Article in journal (Refereed) Published
Abstract [en]

The modulation properties of a laser structure which consists of an active Bragg reflector (300 mu m) integrated with an uncorrugated gain region (600 mu m) have been measured. The laser exhibited a flat FM response and very low spurious intensity modulation when modulating the current in the Bragg reflector. Furthermore, broadband intensity modulation with suppressed frequency chirp could also be achieved. An inhomogeneous linewidth enhancement factor alpha caused by the uneven carrier density distribution between the two sections gives a qualitative explanation to our results.

Place, publisher, year, edition, pages
1989. Vol. 25, 304-305 p.
Keyword [en]
300 micron;600 micron;active Bragg reflector integrated laser;broadband intensity modulation;flat FM response;inhomogeneous linewidth enhancement factor;intensity modulation;modulation properties;spurious intensity modulation;suppressed frequency chirp;uncorrugated gain region;uneven carrier density distribution;distributed Bragg reflector lasers;frequency modulation;optical modulation;semiconductor junction lasers;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89273DOI: 10.1049/el:19890212OAI: oai:DiVA.org:kth-89273DiVA: diva2:503039
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2017-12-07Bibliographically approved
In thesis
1. On the Stability and Dynamics of Semiconductor Lasers
Open this publication in new window or tab >>On the Stability and Dynamics of Semiconductor Lasers
1994 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 1994
Series
Trita-MVT, ISSN 0348-4467 ; 1994:1
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-89578 (URN)
Public defence
1994-09-15, Kollegiesalen, KTH, Drottning Kristinas Väg, Stockholm, 10:00 (English)
Opponent
Supervisors
Note

QC 20130201

Available from: 2013-02-01 Created: 2012-02-15 Last updated: 2013-02-04Bibliographically approved

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Schatz, Richard

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