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Characterisation of n-InP/n-GaAs Wafer Fused Heterojunctions
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1999 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. 79, 206-208 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the properties of wafer-fused Si-doped isotype hetero-junctions between GaAs and InP. Current/voltage measurements were conducted to study the influence of the doping concentrations on each side of the interface on the electrical conductivity. An almost ohmic behavior with a very low series resistance was obtained for the highest examined doping level on the GaAs side, whereas the doping concentration on the InP side was found to be of little significance. Fusion at different temperatures showed that the conductivity degrades significantly below 500°C, although mechanically stable junctions were obtained also at temperatures as low as 305°C. Secondary ion mass spectroscopy measurements showed no redistribution of Si, but indicated the presence of small amounts of C and Fe impurities at the interface.

Place, publisher, year, edition, pages
1999. Vol. 79, 206-208 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83015OAI: diva2:503058

References: Liau, Mull, D.E., (1990) Appl. Phys. Lett., 56, p. 737; Lo, (1991) Appl. Phys. Lett., 58, p. 1961; Black, A., Zhu, Z.-H., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 927; Margalit, N.M., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 359; Salomonsson, F., (1998) J. Appl. Phys., 83, p. 768; Hammar, M., Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (IPRM) '98, p. 801. , May 11-15, Tsukuba, Japan; Wada, H., Ogawa, Y., Kamijoh, T., (1993) Appl. Phys. Lett., 62, p. 738; Dudley, J.J., (1994), PhD dissertation, University of California, Santa BarbaraFarrow, R.F.C., (1974) J. Phys. D: Appl Phys., p. 2436; Sagalowicz, L., (1997) Phil. Mag. Lett., 76, p. 445 NR 20140805

Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2016-05-27Bibliographically approved

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