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Scanning Capacitance Microscopy for Two-Dimensional Doping Profiling in Si- and InP-Based Device Structures
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1999 (English)In: Physica Scripta T, ISSN 02811847 (ISSN), Vol. 79, 163-166 p.Article in journal (Refereed) Published
Abstract [en]

We report on the application of cross-sectional Scanning Capacitance Microscopy (SCM) for studying two-dimensional doping variations in Si and InP device structures. Different sample preparation methods were evaluated and the response of the SCM signal from various test structures, including epitaxially grown layers with n- and p-doping concentrations ranging from 5 × 1014 to 2 × 1019 cm-3, were examined under different imaging conditions. The technique was further evaluated by imaging a Si bipolar transistor structure and an InP-based buried heterostructure diode laser. We conclude that valuable information can be gained also from complex device structures.

Place, publisher, year, edition, pages
1999. Vol. 79, 163-166 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83014OAI: diva2:503075
References: Kopanski, J.J., (1998) J. Vac. Sci. Technol., B16, p. 339; McMurray, J.S., (1998) J. Vac. Sci. Technol., B16, p. 344; Huang, Y., Williams, C.C., Slinkman, J., (1995) Appl. Phys. Lett., 66, p. 344; Neubauer, G., (1996) J. Vac. Sci. Technol., B14, p. 426; Hammar, M., (1998) Appl. Phys. Lett., 72, p. 815; Kleiman, R.N., (1997) IEDM Technical Digest (Cat. No. 97CH36103), , IEEE; Edwards, H., (1998) Appl. Phys. Lett., 72, p. 698; Sze, S.M., (1981) Physics of Semiconductor Devices, p. 391. , Wiley, New York NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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