Change search
ReferencesLink to record
Permanent link

Direct link
InP-based 1.55ÎŒm Resonant Cavity Light-Emitting Diode with two Epitaxial Mirrors
Show others and affiliations
1999 (English)In: Physica Scripta T, ISSN 02811847 (ISSN), Vol. 79, 135-137 p.Article in journal (Refereed) Published
Abstract [en]

We report on the fabrication and characterisation of a resonant cavity light-emitting diode (RCLED) operating at 1.55 ÎŒm. As compared to conventional LEDs such devices merit from a higher emission intensity with a more narrow linewidth and are therefore promising as light sources in fibre optical communication systems. The present design is based on an InGaAsP multi-quantum well structure and utilises two InGaAsP/InP epitaxial distributed Bragg reflectors (DBRs), one 50 periods high reflectivity bottom mirror and a top out-coupling mirror with lower reflectivity. This gives the advantage of top-emission combined with the possibility of achieving very narrow linewidth. The process is fully monolithic and full wafer scale compatible.

Place, publisher, year, edition, pages
1999. Vol. 79, 135-137 p.
Keyword [en]
Cavity resonators, Epitaxial growth, Light reflection, Mirrors, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Semiconductor quantum wells, Resonant cavity light emitting diodes, Light emitting diodes
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83013OAI: diva2:503076
References: Purcel, E.M., (1946) Phys. Rev., 69, p. 681; Shubert, E.F., Hunt, N.E.J., Malik, R.J., Micovic, M., Miller, D.L., (1996) J. Lightwave Technol., 14, p. 1721; De Neve, H., (1995) Phot. Techn. Lett., 7, p. 287; Corbett, B., Considine, L., Walsh, S., Kelly, W.M., (1993) Phot. Techn. Lett., 5, p. 1041; Hunt, N.E.J., Shubert, E.F., Logon, E.F., Zydzik, G.J., (1992) Appl. Phys. Lett., 61, p. 2287; Depreter, B., InP microcavity LED emitting at 1.55 ÎŒn LEOS, p. 241. , Nov 97, San Francisco, Ca, USA; Christenson, G.L., (1997) Phot. Techn. Lett., 9, p. 725; Streubel, K., (1994) J. Cryst. Growth, 143, p. 7; Lourdudoss, S., (1994) Mat. Sci. Eng., B28, p. 179; De Neve, H., (1997) Appl. Phys. Lett., 70, p. 799; Rapp, S., All Epitaxial Single-Fused 1.55 ÎŒm Vertical Cavity Laser Based on an InP Bragg Reflector (1998) Proceedings of the 10th International Conference on Indiumphosphide and Related Materials, p. 303. , 11-15 May Tsukuba Japan; Gebretsadik, H., Kamath, K., Zhou, W.-D., Battacharya, P., (1998) Appl. Phys. Lett., 72, p. 135; Streubel, K., Helin, U., BÀcklin, E., Johansson, Å., High Brightness Visible (660 nm) Resonant-Cavity Light-Emitting Diode Photon. Techn. Lett. NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

Open Access in DiVA

No full text

Other links
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 16 hits
ReferencesLink to record
Permanent link

Direct link