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n-type doping induced losses in 1.3/1.55 ÎŒm distributed Bragg reflectors
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2000 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 388-391 p.Article in journal (Refereed) Published
Abstract [en]

The effect of n-type doping on the peak reflectivity of InGaAsP/InP as well as GaAs/AlAs distributed Bragg reflectors for long-wavelength vertical-cavity lasers has been investigated. A variety of mirrors with different doping levels were grown in both material systems using metal organic vapour phase epitaxy. The reflectance of the structures was measured with high accuracy employing two independent measurement techniques. While nominally undoped DBRs exhibit an expected reflectivity in excess of 99.9%, doping is found to induce significant losses resulting in up to 0.6% reduced reflectance.

Place, publisher, year, edition, pages
Williamsburg, VA, USA, 2000. 388-391 p.
Keyword [en]
Aluminum arsenide, Distributed Bragg reflectors (DBR), Composition effects, Light reflection, Metallorganic vapor phase epitaxy, Semiconducting aluminum compounds, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Semiconductor device structures, Semiconductor growth, Semiconductor lasers, Mirrors
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83011OAI: diva2:503078
Sponsors: IEEE NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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