Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-ÎŒm lasers using metal-organic vapor-phase epitaxy
2001 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Nara, 2001, 563-566 p.Conference paper (Refereed)
GaInNAs/GaAs quantum-well (QW) lasers emitting at 1.3 ÎŒm were grown using metal-organic vapor-phase epitaxy (MOVPE) in the limit of very low growth rate and temperature. The material was characterized by photoluminescence (PL) spectroscopy as well as by implementation in broad-area (BA) edge-emitting lasers. While the PL intensity was found to decrease by more than two orders of magnitude between 1175 and 1350 nm, the corresponding BA laser threshold current showed a much more modest increase. For a 1.28-ÎŒm laser the transparency current was 0.8 kA/cm2, the slope efficiency 0.24 W/A per facet and T0=100 K. Comparison between PL emission properties and BA laser performance reveled a complex relationship. A high PL intensity does not necessarily lead to low threshold-current lasers. In these cases, the FWHM seems to be the more relevant parameter for QW optimization.
Place, publisher, year, edition, pages
Nara, 2001. 563-566 p.
, 2001 International Conference on Indium Phosphide and Related Materials
Metallorganic vapor phase epitaxy, Photoluminescence, Semiconducting indium gallium arsenide, Semiconductor quantum wells, Edge-emitting lasers, Quantum well lasers
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83010OAI: oai:DiVA.org:kth-83010DiVA: diva2:503081
International Conference on Indium Phosphide and Related Materials
Sponsors: IEEE NR 201408052012-02-142012-02-122012-02-14Bibliographically approved