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Studies of self-assembled InP quantum dots in planar microcavities
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2000 (English)In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 69, no Lausanne, Switzerland, 314-317 p.Article in journal (Refereed) Published
Abstract [en]

Self-assembled InP quantum dots have been grown in planar microcavities. The dots were embedded in a Ga0.52In0.48P spacer grown on top of a high reflectance epitaxial Al0.29Ga0.71As/AlAs distributed Bragg reflector (DBR) to obtain a 33λ/4 cavity. The Fabry-Perot microcavity is formed between the AlGaAs/AlAs DBR and a dielectric SiNx/SiO2 DBR deposited on top of the GaInP spacer. The quantum dot emission is centered at 1.62 eV at 7 K. The microcavity resonance is centered at 1.65 eV, with a linewidth of 2 meV. Micro-photoluminescence (PL) studies using different objectives with different numerical apertures enable the collection of transversal modes.

Place, publisher, year, edition, pages
Strasbourg, France, 2000. Vol. 69, no Lausanne, Switzerland, 314-317 p.
Keyword [en]
Epitaxial growth, Mirrors, Photoluminescence, Semiconducting gallium compounds, Semiconducting indium phosphide, Semiconductor quantum dots, Distributed Bragg reflectors (DBR), Fabry-Perot microcavity, Planar microcavities, Nanostructured materials
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83012DOI: 10.1016/S0921-5107(99)00295-0OAI: oai:DiVA.org:kth-83012DiVA: diva2:503085
Note
References: Weisbuch, C., Houdre, R., Stanley, R., (1996) Phys. Scripta, T66, p. 121; Berman, P.R., (1994) Cavity Quantum Electrodynamics, , Academic Press, New York; Gerard, J.M., Sermage, B., Gayral, B., Legrand, B., Costard, E., Thierry-Mieg, V., (1998) Phys. Rev. Lett., 81, p. 1110; Graham, L.A., Huffaker, D.L., Deng, Q., Deppe, D.G., (1998) Appl. Phys. Lett., 72, p. 1670; Huffaker, D.L., Park, G., Zhou, Z., Shchekin, O.B., Deppe, D.G., (1998) Appl. Phys. Lett., 73, p. 2564; Moritz, A., Wirth, R., Hangleiter, A., Kurtenbach, A., Eberl, K., (1996) Appl. Phys. Lett., 69, p. 212; Eberl, K., Kurtenbach, A., Zundel, M., Jin-Phillipp, N.Y., Phillipp, F., Moritz, A., Wirth, R., Hangleiter, A., (1997) J. Cryst. Growth, 175-176, p. 702; Zundel, M., Jin-Phillipp, N.Y., Phillipp, F., Eberl, K., Riedl, T., Fehrenbacher, E., Hangleiter, A., (1998) Appl. Phys. Lett., 73, p. 1784; Riedl, T., Fehrenbacher, E., Hangleiter, A., Zundel, M.K., Eberl, K., (1998) Appl. Phys. Lett., 73, p. 3730; Georgson, K., Carlsson, N., Samuelson, L., Seifert, W., Wallenberg, L.R., (1995) Appl. Phys. Lett., 67, p. 2981; Hessman, D., Castrillo, P., Pistol, M.-E., Anand, S., Carlsson, N., Seifert, W., Samuelson, L., (1996) Appl. Phys. Lett., 67, p. 749; Zwiller, V., Pistol, M.-E., Hessman, D., Cederström, R., Seifert, W., Samuelson, L., (1999) Phys. Rev. B, 59, p. 5021; Carlsson, N., Seifert, W., Petersson, A., Castrillo, P., Pistol, M.-E., Samuelson, L., (1994) Appl. Phys. Lett., 65, p. 3093; Born, M., Wolf, E., (1994) Principles of Optics, , Pergamon, Oxford NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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Condensed Matter Physics

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