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Studies of self-assembled InP quantum dots in planar microcavities
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2000 (English)In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 69, no Lausanne, Switzerland, p. 314-317Article in journal (Refereed) Published
Abstract [en]

Self-assembled InP quantum dots have been grown in planar microcavities. The dots were embedded in a Ga0.52In0.48P spacer grown on top of a high reflectance epitaxial Al0.29Ga0.71As/AlAs distributed Bragg reflector (DBR) to obtain a 33λ/4 cavity. The Fabry-Perot microcavity is formed between the AlGaAs/AlAs DBR and a dielectric SiNx/SiO2 DBR deposited on top of the GaInP spacer. The quantum dot emission is centered at 1.62 eV at 7 K. The microcavity resonance is centered at 1.65 eV, with a linewidth of 2 meV. Micro-photoluminescence (PL) studies using different objectives with different numerical apertures enable the collection of transversal modes.

Place, publisher, year, edition, pages
Strasbourg, France, 2000. Vol. 69, no Lausanne, Switzerland, p. 314-317
Keywords [en]
Epitaxial growth, Mirrors, Photoluminescence, Semiconducting gallium compounds, Semiconducting indium phosphide, Semiconductor quantum dots, Distributed Bragg reflectors (DBR), Fabry-Perot microcavity, Planar microcavities, Nanostructured materials
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83012DOI: 10.1016/S0921-5107(99)00295-0OAI: oai:DiVA.org:kth-83012DiVA, id: diva2:503085
Note
References: Weisbuch, C., Houdre, R., Stanley, R., (1996) Phys. Scripta, T66, p. 121; Berman, P.R., (1994) Cavity Quantum Electrodynamics, , Academic Press, New York; Gerard, J.M., Sermage, B., Gayral, B., Legrand, B., Costard, E., Thierry-Mieg, V., (1998) Phys. Rev. Lett., 81, p. 1110; Graham, L.A., Huffaker, D.L., Deng, Q., Deppe, D.G., (1998) Appl. Phys. Lett., 72, p. 1670; Huffaker, D.L., Park, G., Zhou, Z., Shchekin, O.B., Deppe, D.G., (1998) Appl. Phys. Lett., 73, p. 2564; Moritz, A., Wirth, R., Hangleiter, A., Kurtenbach, A., Eberl, K., (1996) Appl. Phys. Lett., 69, p. 212; Eberl, K., Kurtenbach, A., Zundel, M., Jin-Phillipp, N.Y., Phillipp, F., Moritz, A., Wirth, R., Hangleiter, A., (1997) J. Cryst. Growth, 175-176, p. 702; Zundel, M., Jin-Phillipp, N.Y., Phillipp, F., Eberl, K., Riedl, T., Fehrenbacher, E., Hangleiter, A., (1998) Appl. Phys. Lett., 73, p. 1784; Riedl, T., Fehrenbacher, E., Hangleiter, A., Zundel, M.K., Eberl, K., (1998) Appl. Phys. Lett., 73, p. 3730; Georgson, K., Carlsson, N., Samuelson, L., Seifert, W., Wallenberg, L.R., (1995) Appl. Phys. Lett., 67, p. 2981; Hessman, D., Castrillo, P., Pistol, M.-E., Anand, S., Carlsson, N., Seifert, W., Samuelson, L., (1996) Appl. Phys. Lett., 67, p. 749; Zwiller, V., Pistol, M.-E., Hessman, D., Cederström, R., Seifert, W., Samuelson, L., (1999) Phys. Rev. B, 59, p. 5021; Carlsson, N., Seifert, W., Petersson, A., Castrillo, P., Pistol, M.-E., Samuelson, L., (1994) Appl. Phys. Lett., 65, p. 3093; Born, M., Wolf, E., (1994) Principles of Optics, , Pergamon, Oxford NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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Condensed Matter Physics

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