1300-nm GaAs-based vertical-cavity lasers
2002 (English)In: Proceedings of SPIE - The International Society for Optical Engineering, Brugge, 2002, Vol. 4942, 137-149 p.Conference paper (Refereed)
We compare GaInNAs and highly strained InGaAs quantum-wells (QWs) for applications in metal-organic vapor-phase epitaxy (MOVPE)-grown GaAs-based 1300-nm vertical-cavity lasers (VCLs). While the peak wavelength of InGaAs QWs can be extended by a small fraction of N, the luminescence efficiency degrades strongly with wavelength. On the other hand, using highly strained InGaAs QWs in combination with a large VCL detuning it is also possible to push the emission wavelength towards 1.3 ÎŒm. The optimized MOVPE growth conditions for such QW and VCL structures are discussed in some detail. It is noted that GaInNAs and InGaAs QWs preferably are grown at low temperature, but with quite different V/III ratios and growth rates. We also point out the importance of reduced doping concentration and growth temperature of the n-doped bottom distributed Bragg reflector to minimize optical loss and for compatibility with GaInNAs QWs. InGaAs VCLs with emission wavelengths beyond 1260 nm are demonstrated. This includes mW-range output power, mA-range threshold current and 10 Gb/s data transmission.
Place, publisher, year, edition, pages
Brugge, 2002. Vol. 4942, 137-149 p.
, VCSELs and Optical Interconnects
GaInNAs, InGaAs, Long wavelength, VCL, VCSEL, Vertical-cavity laser, Data communication systems, Laser beam effects, Semiconducting indium gallium arsenide, Semiconductor doping, Vertical-cavity lasers (VCL), Semiconductor quantum wells
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83006DOI: 10.1117/12.470815OAI: oai:DiVA.org:kth-83006DiVA: diva2:503088
Sponsors: SPIE NR 201408052012-02-142012-02-122012-02-14Bibliographically approved