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High-performance 1.2-ÎŒm Highly strained InGaAs/GaAs quantum well lasers
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2002 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Stockholm, 2002, 107-110 p.Conference paper, Published paper (Refereed)
Abstract [en]

The growth and characterisation of high-performance 1.2-Όm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli.

Place, publisher, year, edition, pages
Stockholm, 2002. 107-110 p.
Series
14th Indium Phosphide and Related Materials Conference
Keyword [en]
Semiconducting indium gallium arsenide, Semiconductor lasers, Thermoanalysis, Waveguides, Ridge-waveguides (RWG), Quantum well lasers
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83009OAI: oai:DiVA.org:kth-83009DiVA: diva2:503090
Conference
International Conference on Indium Phosphide and Related Materials
Note
Sponsors: IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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Condensed Matter Physics

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