Morphological instability of GaInNAs quantum wells on AlGaAs/GaAs distributed bragg reflectors grown by metal-organic vapor-phase epitaxy
2002 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Stockholm, 2002, 241-244 p.Conference paper (Refereed)
We report on the optical and structural integrity of metal-organic vapor-phase epitaxy grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Surface morphology as measured by atomic force microscopy and quantum well photoluminescence were investigated for different numbers of DBR periods and different DBR-growth temperatures. Increased number of DBR periods severely degrades the surface morphology and photoluminescence. However, a significant improvement was obtained by lowering the growth temperature of the DBRs from 745 to 680Â°C.
Place, publisher, year, edition, pages
Stockholm, 2002. 241-244 p.
, 14th Indium Phosphide and Related Materials Conference
Atomic force microscopy, Bragg cells, Degradation, Metallorganic vapor phase epitaxy, Morphology, Optical properties, Photoluminescence, Semiconducting aluminum compounds, Semiconducting gallium compounds, Semiconductor growth, Bragg reflectors, Morphological instability, Semiconductor quantum wells
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83007OAI: oai:DiVA.org:kth-83007DiVA: diva2:503092
International Conference on Indium Phosphide and Related Materials
Sponsors: IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society NR 201408052012-02-142012-02-122012-02-14Bibliographically approved