1.3 ÎŒm strained InGaAs quantum well VCSELs: Operation characteristics and transverse modes analysis
2006 (English)In: Vertical-Cavity Surface-Emitting Lasers X / [ed] Lei, C; Choquette, KD, San Jose, CA, 2006, Vol. 6132, 13207-13207 p.Conference paper (Refereed)
We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.
Place, publisher, year, edition, pages
San Jose, CA, 2006. Vol. 6132, 13207-13207 p.
, PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 613207
Long-wavelength vertical cavity surface emitting laser, Optical interconnections, Strained inGaAs quantum well, Continuous wave lasers, Metallorganic vapor phase epitaxy, Optical devices, Optical interconnects, Oxides, Semiconducting gallium arsenide, Temperature control, Current-temperature characteristics, Metalorganic vapour-phase epitaxy (MOVPE), Oxide-confined device, Quantum well lasers
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83003DOI: 10.1117/12.646140ISI: 000237084500006ScopusID: 2-s2.0-33646174722OAI: oai:DiVA.org:kth-83003DiVA: diva2:503115
Conference on Vertical-Cavity Surface-Emitting Lasers X. San Jose, CA. JAN 25-26, 2006
QC 201203132012-02-152012-02-122012-03-13Bibliographically approved