Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applications
2006 (English)In: Nanoengineering: Fabrication, Properties, Optics, and Devices III / [ed] Dobisz, EA; Eldada, LA, 2006, Vol. 6327, L3270-L3270 p.Conference paper (Refereed)
We report on a quantum dot (QD) structure grown on a 4" GaAs substrate by metal organic vapor phase epitaxy (MOVPE), which consists of five stacked InAs/InGaAs/GaAs QD layers embedded in the center of a typical in-plane waveguide. The density of the QDs is about 2.5 Ã— 1010 cm -2 per QD layer. The photoluminescence (PL) peak wavelength at 1322 nm corresponding to the interband transition of the QD ground states was observed at room temperature with a full width at half-maximum of 49 meV. A good uniformity of the QD structure across the 4" wafer was verified with a variation of the PL peak wavelength of 0.9 % from the wafer center to the edge. Top p-contacts and a bottom n-contact were processed on the QD structure, and electroluminescence (EL) spectra were measured at different temperatures. An EL peak corresponding to the QD ground states emission was obtained at 1325 nm at room temperature.
Place, publisher, year, edition, pages
2006. Vol. 6327, L3270-L3270 p.
, PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 6327
Electroluminescence, MOVPE, Optoelectronic devices, Photoluminescence, Quantum dots, Ground state, Metallorganic vapor phase epitaxy, Optical waveguides, Semiconductor quantum dots, Temperature distribution, Electroluminescence (EL) spectra, Ground states emission, Room temperature, Semiconducting indium gallium arsenide
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83002DOI: 10.1117/12.681624ISI: 000241985100015ScopusID: 2-s2.0-33751072976OAI: oai:DiVA.org:kth-83002DiVA: diva2:503118
Conference on Nanoengineering - Fabrication, Properties, Optics and Devices III. San Diego, CA. AUG 15-17, 2006
Sponsors: SPIE. QC 20120203012012-02-152012-02-122012-03-01Bibliographically approved