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Microstructured photonic crystal for single-mode long wavelength VCSELs
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2008 (English)In: Semiconductor Lasers and Laser Dynamics III, 2008, Vol. 6997Conference paper (Refereed)
Abstract [en]

In this article, we report on long wavelength (1.27 ÎŒm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode room-temperature continuous-wave lasing operation was demonstrated for devices designed and processed with different two-dimensional etched patterns. The conventional epitaxial structure was grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. We obtained up to 1.7 mW optical output power and more than 30 dB Side-Mode Suppression Ratio (SMSR) at room temperature and in continuous wave operation. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at the given wavelength.

Place, publisher, year, edition, pages
2008. Vol. 6997
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277786X ; 6997
Keyword [en]
Long-wavelength, Photonic crystals, Singlemode, Strained InGaAs quantum well, VCSEL, Crystal atomic structure, Crystal growth, Dynamics, Electric conductivity, Epitaxial growth, Heterojunctions, Lasers, Metallorganic vapor phase epitaxy, Metals, Molecular beam epitaxy, Optical interconnects, Powders, Quantum well lasers, Semiconducting indium, Semiconductor materials, Semiconductor quantum wells, Semiconductor quantum wires, Spectrum analyzers, Structural metals, Surface emitting lasers, Two dimensional, Wells, Applications., Continuous-wave lasing, Continuous-wave operation, Design structures, Epitaxial structures, Etched patterns, Fundamental modes, GaAs/AlGaAs, Index-guiding, Laser dynamics, Long wavelengths, Metal-organic vapor phase epitaxy, Mode selections, Numerical modelling, On-wafer, Optical interconnection, Optical output power, Optical-, Oxidation layers, Photonic, Plane wave method, Probe stations, Quantum wells, Room temperatures, Side-mode-suppression-ratio, Single modes, Spectral characterization, Square lattices, Semiconductor lasers
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-82994DOI: 10.1117/12.783317ISI: 000258325400024ScopusID: 2-s2.0-50249177623OAI: diva2:503129
Semiconductor Lasers and Laser Dynamics III. Strasbourg. 7 April 2008 - 9 April 2008
QC 20120228Available from: 2012-02-15 Created: 2012-02-12 Last updated: 2012-02-28Bibliographically approved

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Berggren, JesperHammar, Mattias
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Microelectronics and Applied Physics, MAP
Condensed Matter Physics

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