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Experimental study of the lasing modes of 1.3-ÎŒm highly strained InGaAs-GaAs quantum-well oxide-confined VCSELs
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2009 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 21, no 6, 377-379 p.Article in journal (Refereed) Published
Abstract [en]

We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes" and by aperture modes, respectively, for small and large driving currents. We present complementary investigations of the laser emission including far-field angular distribution and spectroscopic near-field optical microscopy to a better understanding of the nature of the "oxide modes."

Place, publisher, year, edition, pages
2009. Vol. 21, no 6, 377-379 p.
Keyword [en]
Strained InGaAs quantum well (QW), Transverse modes, Vertical-cavity surface-emitting laser (VCSEL), Driving current, Emission properties, Experimental studies, Far-field, GaAs, Highly strained, InGaAs quantum wells, Laser emission, Lasing modes, Lasing properties, Long wavelength, Main mode, Near field optical microscopy, Oxide mode, Quantum well, Transverse mode, Vertical-cavity surface emitting laser, Angular distribution, Gallium alloys, Gallium arsenide, Lasers, Microoptics, Optical microscopy, Optical waveguides, Semiconducting gallium, Semiconducting indium, Semiconductor quantum wells, Surface emitting lasers, Quantum well lasers
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-82993DOI: 10.1109/LPT.2008.2012170ScopusID: 2-s2.0-77955066329OAI: diva2:503132
QC 20120305Available from: 2012-02-15 Created: 2012-02-12 Last updated: 2012-03-05Bibliographically approved

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Berggren, JesperSundgren, PetrusHammar, Mattias
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Microelectronics and Applied Physics, MAP
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ReferencesLink to record
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