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Self-consistent modeling of a transistor vertical-cavity surface-emitting laser
Department of Electrical and Computer Engineering, University of British Columbia.
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2010 (English)In: 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, 2010, p. 45-46Conference paper, Published paper (Refereed)
Abstract [en]

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The quantum capture/escape process is simulated using a quantum-trap model. Both the steady state and frequency response of the T-VCSEL are calculated by a numerical and analytical approach.

Place, publisher, year, edition, pages
2010. p. 45-46
Keywords [en]
Analytical approach, Multiple quantum wells, Self consistent modeling, Steady state, Vertical-cavity surface emitting laser, Computer simulation, Electrooptical devices, Frequency response, Lasers, Optoelectronic devices, Quantum well lasers, Surface emitting lasers, Semiconductor quantum wells
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-82987DOI: 10.1109/NUSOD.2010.5595673Scopus ID: 2-s2.0-78449308504ISBN: 9781424470174 (print)OAI: oai:DiVA.org:kth-82987DiVA, id: diva2:503136
Conference
10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010. Atlanta, GA. 6 September 2010 - 9 September 2010
Note
QC 20120228Available from: 2012-02-15 Created: 2012-02-12 Last updated: 2012-02-28Bibliographically approved

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Hammar, Mattias

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Berggren, JesperXiang, YuHammar, Mattias
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