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Luminescence in epitaxial Er-doped LiNbO3 films
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8774-9302
2012 (English)In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 37, no 3, 419-421 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial Er-doped LiNbO3 films were pulsed-laser-deposited onto c-cut sapphire. Wavelength dispersion of the refractive index and the extinction coefficient was obtained by fitting the experimental transmittance spectrum to the Swanepoel formula and microscopic theory, which accounts for two resonance transitions in the electric dipole approximation. Strong room temperature luminescence was observed under 514.5 nm Ar-laser pumping. Two-lifetime (3.0 and 6.0 ms) luminescent decay is characteristic for the lasing I-4(13/2) -> I-4(15/2) transition in Er:LiNbO3 films.

Place, publisher, year, edition, pages
2012. Vol. 37, no 3, 419-421 p.
Keyword [en]
Pulsed-Laser Deposition, Lithium-Niobate
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-91265DOI: 10.1364/OL.37.000419ISI: 000300407600046Scopus ID: 2-s2.0-84856637593OAI: oai:DiVA.org:kth-91265DiVA: diva2:509047
Funder
Swedish Research Council
Note
QC 20120312Available from: 2012-03-12 Created: 2012-03-12 Last updated: 2017-12-07Bibliographically approved

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Khartsev, Sergey I.

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