Manganese in silicon carbide
2012 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 273, 127-130 p.Article in journal (Refereed) Published
Structural disorder and relocation of implanted Mn in semi-insulating 4H-SiC has been studied. Subsequent heat treatment of Mn implanted samples has been performed in the temperature range 1400-2000 degrees C. The depth distribution of manganese is recorded by secondary ion mass spectrometry. Rutherford backscattering spectrometry has been employed for characterization of crystal disorder. Ocular inspection of color changes of heat-treated samples indicates that a large portion of the damage has been annealed. However, Rutherford backscattering shows that after heat treatment, most disorder from the implantation remains. Less disorder is observed in the [0 0 0 1] channel direction compared to [1 1 (2) over bar 3] channel direction. A substantial rearrangement of manganese is observed in the implanted region. No pronounced manganese diffusion deeper into the sample is recorded.
Place, publisher, year, edition, pages
2012. Vol. 273, 127-130 p.
SiC, Ion implantation, RBS/channeling, SIMS, Radiation damage, Dopant diffusion
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-91249DOI: 10.1016/j.nimb.2011.07.056ISI: 000300471000035ScopusID: 2-s2.0-84856115992OAI: oai:DiVA.org:kth-91249DiVA: diva2:509261
QC 201203122012-03-122012-03-122012-03-12Bibliographically approved