Free form printing of silicon micro- and nanostructures
2010 (English)Patent (Other (popular science, discussion, etc.))
The invention relates to a method of making a three-dimensional structure in semiconductor material. A substrate (20) is provided having at least a surface comprising semiconductor material. Selected areas of the surface of the substrate are to a focused ion beam whereby the ions are implanted in the semiconductor material in said selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focused ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focused ion beam is etched away so as to provide a three-dimensional structure on said substrate (20).
Place, publisher, year, edition, pages
IdentifiersURN: urn:nbn:se:kth:diva-91412OAI: oai:DiVA.org:kth-91412DiVA: diva2:510006
QS 20152012-03-142012-03-142015-01-20Bibliographically approved