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Free form printing of silicon micro- and nanostructures
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0003-3452-6361
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0002-0525-8647
2010 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

The invention relates to a method of making a three-dimensional structure in semiconductor material. A substrate (20) is provided having at least a surface comprising semiconductor material. Selected areas of the surface of the substrate are to a focused ion beam whereby the ions are implanted in the semiconductor material in said selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focused ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focused ion beam is etched away so as to provide a three-dimensional structure on said substrate (20).

Place, publisher, year, edition, pages
2010.
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-91412OAI: oai:DiVA.org:kth-91412DiVA: diva2:510006
Patent
WO 2011126438A1
Note

QS 2015

Available from: 2012-03-14 Created: 2012-03-14 Last updated: 2015-01-20Bibliographically approved

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Authority records BETA

Fischer, Andreas C.Niklaus, Frank

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