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High-Performance Infrared Micro-Bolometer Arrays Manufactured Using Very Large Scale Heterogeneous Integration
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0002-9820-8728
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0003-3452-6361
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0001-9552-4234
KTH, School of Electrical Engineering (EES), Microsystem Technology.
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2011 (English)In: OMN2011: 16TH INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS, 2011, 9-10 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper reports on the implementation and characterization of arrays of uncooled infrared bolometers containing mono-crystalline Si/SiGe quantum well (QW) thermistors. The bolometer arrays are integrated on silicon fan-out wafers using very-large scale heterogeneous integration that is compatible with standard CMOS wafers. Infrared bolometer arrays with 320x240 pixels and pixel pitches of 25 mu m x 25 mu m and 17 mu m x 17 mu m have been implemented, respectively.

Place, publisher, year, edition, pages
2011. 9-10 p.
Keyword [en]
uncooled infrared bolometer, wafer-level heterogeneous integration, silicon germanium quantum well, SiGe
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-91413DOI: 10.1109/OMEMS.2011.6031073ISI: 000297850100003Scopus ID: 2-s2.0-82955193710OAI: oai:DiVA.org:kth-91413DiVA: diva2:510009
Conference
16th International Conference on Optical MEMS and Nanophotonics (OMN). Istanbul, TURKEY. AUG 08-11, 2011
Note
QC 20120327Available from: 2012-03-14 Created: 2012-03-14 Last updated: 2012-03-27Bibliographically approved

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Forsberg, FredrikFischer, Andreas C.Stemme, GöranNiklaus, Frank

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