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Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0002-9820-8728
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
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2012 (English)In: 2012 MRS Spring Meeting - Symposium L – Group IV Photonics for Sensing and Imaging, Materials Research Society, 2012Conference paper, Published paper (Other academic)
Abstract [en]

Semiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.

Place, publisher, year, edition, pages
Materials Research Society, 2012.
Series
MRS Online Proceedings Library, ISSN 1946-4274 ; 1437
Keyword [en]
semiconducting, sensor, bonding
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-91415DOI: 10.1557/opl.2012.1324Scopus ID: 2-s2.0-84879264122OAI: oai:DiVA.org:kth-91415DiVA: diva2:510013
Conference
2012 MRS Spring Meeting & Exhibit, Symposium L,April 9-13, 2012 San Francisco, California
Funder
VINNOVA
Note

QC 20130111

Available from: 2012-03-14 Created: 2012-03-14 Last updated: 2015-04-17Bibliographically approved

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bolometer(1457 kB)189 downloads
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Malm, Gunnar B.Forsberg, FredrikNiklaus, Frank

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Malm, Gunnar B.Kolahdouz, MohammadrezaForsberg, FredrikRoxhed, NiclasNiklaus, Frank
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Integrated Devices and CircuitsMicrosystem Technology (Changed name 20121201)
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