Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI
2008 (English)In: ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON / [ed] Esseni, D; Palestri, P; Selmi, L, NEW YORK: IEEE , 2008, 175-178 p.Conference paper (Refereed)
This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the I-on/I-off current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2008. 175-178 p.
Si implantation, underlap length, PtSi, Schottky barrier-MOSFET, dopant segregation
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-92175DOI: 10.1109/ULIS.2008.4527167ISI: 000256023400040ScopusID: 2-s2.0-49049112693OAI: oai:DiVA.org:kth-92175DiVA: diva2:512618
9th International Conference on Ultimate Integration on Silicon. Univ Udine, Udine, ITALY. MAR 13-14, 2008
QC 201203282012-03-282012-03-282012-03-28Bibliographically approved