Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
Show others and affiliations
2008 (English)In: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, NEW YORK: IEEE , 2008, 735-738 p.Conference paper, Published paper (Refereed)
Abstract [en]

Strained Si HBTs have been demonstrated for the first time with a maximum current gain (P) of 3700 using a relaxed Si(0.85)Ge(0.15) virtual substrate, Si(0.7)Ge(0.3) base and strained Si emitter. This represents 10x and 27x larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (< 20 fA).

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2008. 735-738 p.
Series
International Electron Devices Meeting
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-92174DOI: 10.1109/IEDM.2008.4796800ISI: 000265829300171Scopus ID: 2-s2.0-64549100190OAI: oai:DiVA.org:kth-92174DiVA: diva2:512626
Conference
IEEE International Electron Devices Meeting. San Francisco, CA. DEC 15-17, 2008
Note
QC 20120328Available from: 2012-03-28 Created: 2012-03-28 Last updated: 2012-03-28Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Malm, GunnarHellström, Per-Erik

Search in DiVA

By author/editor
Malm, GunnarWang, YongbinHellström, Per-ErikÖstling, Mikael
By organisation
Integrated Devices and Circuits
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 20 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf