Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates
2008 (English)In: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, NEW YORK: IEEE , 2008, 735-738 p.Conference paper (Refereed)
Strained Si HBTs have been demonstrated for the first time with a maximum current gain (P) of 3700 using a relaxed Si(0.85)Ge(0.15) virtual substrate, Si(0.7)Ge(0.3) base and strained Si emitter. This represents 10x and 27x larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (< 20 fA).
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2008. 735-738 p.
, International Electron Devices Meeting
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-92174DOI: 10.1109/IEDM.2008.4796800ISI: 000265829300171ScopusID: 2-s2.0-64549100190OAI: oai:DiVA.org:kth-92174DiVA: diva2:512626
IEEE International Electron Devices Meeting. San Francisco, CA. DEC 15-17, 2008
QC 201203282012-03-282012-03-282012-03-28Bibliographically approved