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Operation of Silicon Carbide BJTs Free from Bipolar Degradation
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2010 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 / [ed] Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T, 2010, 1057-1060 p.Conference paper (Refereed)
Abstract [en]

The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective region into saturation. This results in considerable drop of emitter current gain if the BJT is run at a reasonably low collector-emitter bias. The base region does not play any significant role in bipolar degradation. Long-term stress tests have shown full stability of large-area high-power BJTs under minority carrier injection conditions provided the devices are fabricated using low Basal Plane Dislocation (BPD) material. However, an approximately 20% current gain compression is observed for the first 30-60 hours of burn-in under common emitter operation, which is related to instability of surface recombination in the passive base region.

Place, publisher, year, edition, pages
2010. 1057-1060 p.
, Materials Science Forum, ISSN 0255-5476 ; 645-648
Keyword [en]
BJT, bipolar degradation, BPD
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-92171DOI: 10.4028/ 000279657600252ScopusID: 2-s2.0-77955454900OAI: diva2:512631
13th International Conference on Silicon Carbide and Related Materials OCT 11-16, 2009 Nurnberg, GERMANY
QC 20120328Available from: 2012-03-28 Created: 2012-03-28 Last updated: 2012-03-28Bibliographically approved

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Domeij, MartinÖstling, Mikael
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