2.2 kV SiC BJTs with low V(CESAT) fast switching and short-circuit capability
2010 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 / [ed] Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T, 2010, 1033-1036 p.Conference paper (Refereed)
This paper reports large active area (15 mm(2)) 4H-SiC BJTS with a low V(CESAT)=0.6 V at 1(C)=20 A (J(C)=133 A/cm(2)) and an open-base breakdown voltage BV(CEO)=2.3 kV at T=25 degrees C. The corresponding room temperature specific on-resistance R(SP.ON)=4.5 m Omega cm(2) is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The onstate and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VcE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 mu s short-circuit capability with V(CE)=800 V was shown for the 1200 V BJT.
Place, publisher, year, edition, pages
2010. 1033-1036 p.
, Materials Science Forum, ISSN 0255-5476 ; 645-648
Bipolar junction transistor, V(CESAT), switching, safe operating area
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-92170DOI: 10.4028/www.scientific.net/MSF.645-648.1033ISI: 000279657600246ScopusID: 2-s2.0-77950945600OAI: oai:DiVA.org:kth-92170DiVA: diva2:512634
13th International Conference on Silicon Carbide and Related Materials OCT 11-16, 2009 Nurnberg, GERMANY
QC 201203282012-03-282012-03-282012-03-28Bibliographically approved