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SiC Bipolar Devices for High Power and Integrated Drivers
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2011 (English)In: Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE, IEEE conference proceedings, 2011, , 4 p.227-234 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. The first SiC device to reach the market was the unipolar Schottky diode. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now being offered in the voltage range up to 1.2 kV. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available, which has removed one obstacle for the introduction of bipolar devices. The SiC wafer roadmap looks very favorable as volume production takes off. Other advantages of SiC are the possibility of high temperature operation (>; 300 °C) and in radiation hard environments, which could offer considerable system advantages. Thanks to the mature SiC process technology, low-power integrated circuits are now also viable. Such circuits could find use in integrated drivers operating at elevated temperatures.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2011. , 4 p.227-234 p.
Keyword [en]
Silicon Carbide bipolar process technology, bipolar physics and simulation, power devices, analog/digital circuits, integrated drivers, high temperature, radiation hardness
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-93104DOI: 10.1109/BCTM.2011.6082788ISI: 000298256500053Scopus ID: 2-s2.0-83455219230ISBN: 978-1-61284-165-6 (print)OAI: oai:DiVA.org:kth-93104DiVA: diva2:515003
Conference
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011Atlanta, GA, 9-11 Oct. 2011
Note

© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

QC 20120418

Available from: 2012-04-18 Created: 2012-04-11 Last updated: 2012-04-19Bibliographically approved

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SiC power devices IEDM(557 kB)259 downloads
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Malm, B.GunnarZetterling, Carl-Mikael

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