Damage accumulation and annealing behavior in high fluence implanted MgZnO
2012 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 272, 426-429 p.Article in journal (Refereed) Published
Molecular beam epitaxy grown MgxZn1-xO (x <= 0.3) layers were implanted at room temperature with 150 keV Er-166(+) ions in a fluence range of 5 x 10(15-)3 x 10(16) cm(-2). Evolution of ion-induced damage and structural changes were studied by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis and time-of-flight elastic recoil detection analysis. Results show that damage production enhances in both Zn- and O-sublattices with increasing the Mg content in the MgZnO. However, MgZnO as well as pure ZnO exhibits a high degree of dynamic annealing and MgZnO can not be amorphized even at the highest ion fluence used. Annealing of heavily damaged ZnO leads to a strong surface erosion and thinning of the film. Increasing the Mg content suppresses the surface evaporation in high fluence implanted MgZnO but leads to a strong surface decomposition accompanied with a Mg-rich surface layer formation during post-implantation annealing.
Place, publisher, year, edition, pages
2012. Vol. 272, 426-429 p.
Ion implantation, Damage, Annealing, MgZnO
Electrical Engineering, Electronic Engineering, Information Engineering Physical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-93402DOI: 10.1016/j.nimb.2011.01.115ISI: 000301159900098ScopusID: 2-s2.0-84655170050OAI: oai:DiVA.org:kth-93402DiVA: diva2:515799
QC 201204162012-04-162012-04-162015-08-17Bibliographically approved