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Damage recovery in the oxygen sublattice of ZnO by post-implantation annealing
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2012 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 272, 418-421 p.Article in journal (Refereed) Published
Abstract [en]

Hydrothermally grown zinc oxide bulk samples were implanted with 200 key-Co ions with a fluence of 4.5 x 10(16) cm(-2) and then annealed in air during 30 min at different temperatures up to 900 degrees C. After the implantation and each annealing step, the samples were analyzed using the nuclear reaction O-16(alpha,alpha)O-16 at 3.045 MeV He in random and channeling directions to follow the annealing of the disorder profile in the O sublattice. For comparison, the disorder in the Zn sublattice was also observed by Rutherford backscattering spectrometry (RBS) in random and channeling directions. The results reveal that the disorder created during the Co implantation is slightly higher in the O sublattice than in the Zn sublattice. The disorder recovery induced by the thermal treatments, starts at 500 degrees C in the O sublattice and at 700 degrees C in the Zn sublattice. Although, the most part of the disorder recovery occurs between 700 and 800 degrees C in both sublattices.

Place, publisher, year, edition, pages
2012. Vol. 272, 418-421 p.
Keyword [en]
Nuclear reaction analysis, ZnO, Ion implantation, Damage, Annealing
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-93401DOI: 10.1016/j.nimb.2011.01.113ISI: 000301159900096Scopus ID: 2-s2.0-84655176577OAI: oai:DiVA.org:kth-93401DiVA: diva2:515800
Note

QC 20120416

Available from: 2012-04-16 Created: 2012-04-16 Last updated: 2017-12-07Bibliographically approved

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Hallén, Anders

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