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Characterization of donor-acceptor-pair emission in fluorescent 6H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
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2012 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T148, 014003- p.Article in journal (Refereed) Published
Abstract [en]

We investigated donor-acceptor-pair emission in N-B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 10(18) cm(-3) is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4x10(18) cm(-3) is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry-Perot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N-B-doped fluorescent SiC is a good wavelength converter in white LED applications.

Place, publisher, year, edition, pages
2012. Vol. T148, 014003- p.
Keyword [en]
Dopant concentrations, Emission angle, Interference effects, n-Type doping, Strong luminescence, Wavelength converter, White LED
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-93934DOI: 10.1088/0031-8949/2012/T148/014003ISI: 000302216000004Scopus ID: 2-s2.0-84862085079OAI: oai:DiVA.org:kth-93934DiVA: diva2:524833
Funder
Swedish Research Council, 2009-5307Swedish Energy Agency
Note

QC 20120504

Available from: 2012-05-04 Created: 2012-05-03 Last updated: 2017-12-07Bibliographically approved

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Linnarsson, Margareta

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