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Deposition rate loss in high power impulse magnetron sputtering: understanding through computational modeling
Plasma and Coatings Physics Division.
KTH, School of Electrical Engineering (EES), Space and Plasma Physics.
KTH, School of Electrical Engineering (EES), Space and Plasma Physics.
KTH, School of Electrical Engineering (EES), Space and Plasma Physics.
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2011 (English)In: 54th Annual Technical Conference Proceedings, Chicago, IL April 16-21,2011, Society of Vacuum Coaters , 2011, 172-177 p.Conference paper, Published paper (Refereed)
Abstract [en]

A lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared to DC magnetron sputtering (DCMS) for the same average power is often reported. The invoked reason is in many cases back-attraction of ionized sputteredmaterial to the target, but other effects are also likely to appear. In this work experimental results on the plasma and discharge conditions from several different HiPIMS experiments have been analyzed using a global discharge model to get an overall understanding of the HiPIMS discharge. The objective has been to quantify mechanisms reducing the deposition rate by studying the ionization of sputtered material and the possibility of back-attraction of ionized species, as well as heating of the neutral process gas leading to gas rarefaction.

Place, publisher, year, edition, pages
Society of Vacuum Coaters , 2011. 172-177 p.
Series
Annual Technical Conference Proceedings, ISSN 0737-5921
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-94001OAI: oai:DiVA.org:kth-94001DiVA: diva2:524865
Conference
54th Annual Technical Conference, Chicago, IL April 16-21,2011
Note
QC 20120607Available from: 2012-06-07 Created: 2012-05-04 Last updated: 2012-06-07Bibliographically approved

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