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Gate drive units for silicon carbide power transistors - solutions overview
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
2012 (English)In: Przeglad Elektrotechniczny, ISSN 0033-2097, E-ISSN 2449-9544, Vol. 88, no 4B, 187-192 p.Article in journal (Refereed) Published
Abstract [en]

The paper presents an overview of the gate drive units for Silicon Carbide power transistors. Solutions for two types of Junction Field Effect Transistors: normally-on and normally-off as well as base drive units for bipolar transistors (BJTs) are described. Experimental results - waveforms of the currents and voltages recorded during double-pulse tests are presented in order to illustrate switching behavior of discussed transistors.

Place, publisher, year, edition, pages
2012. Vol. 88, no 4B, 187-192 p.
Keyword [en]
Silicon Carbide, JFET, BJT, gate drive units
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-94076ISI: 000302309400034Scopus ID: 2-s2.0-84859339348OAI: oai:DiVA.org:kth-94076DiVA: diva2:525222
Note

QC 20120507

Sterowniki bramkowe dla tranzystorów z we{ogonek}glika krzemu (SiC) - przegla{ogonek}d rozwia{ogonek}zań

Available from: 2012-05-07 Created: 2012-05-07 Last updated: 2017-12-07Bibliographically approved

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