Change search
ReferencesLink to record
Permanent link

Direct link
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-8760-1137
Show others and affiliations
2012 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 4, 510-512 p.Article in journal (Refereed) Published
Abstract [en]

The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 x 10(15) cm(-2) in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an f(T)/f(max) ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.

Place, publisher, year, edition, pages
2012. Vol. 33, no 4, 510-512 p.
Keyword [en]
InAs/AlSb high-electron-mobility transistor, ion implantation, low power, MMIC
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-94049DOI: 10.1109/LED.2012.2185480ISI: 000302232900015ScopusID: 2-s2.0-84859217969OAI: diva2:525427
Swedish Research Council, 621-2009-4818
QC 20120508Available from: 2012-05-08 Created: 2012-05-07 Last updated: 2012-05-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Hallén, Anders
By organisation
Microelectronics and Applied Physics, MAP
In the same journal
IEEE Electron Device Letters
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 29 hits
ReferencesLink to record
Permanent link

Direct link