Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
2012 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 4, 510-512 p.Article in journal (Refereed) Published
The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 x 10(15) cm(-2) in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an f(T)/f(max) ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.
Place, publisher, year, edition, pages
2012. Vol. 33, no 4, 510-512 p.
InAs/AlSb high-electron-mobility transistor, ion implantation, low power, MMIC
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-94049DOI: 10.1109/LED.2012.2185480ISI: 000302232900015ScopusID: 2-s2.0-84859217969OAI: oai:DiVA.org:kth-94049DiVA: diva2:525427
FunderSwedish Research Council, 621-2009-4818
QC 201205082012-05-082012-05-072012-05-08Bibliographically approved