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Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-8760-1137
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2012 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 4, 510-512 p.Article in journal (Refereed) Published
Abstract [en]

The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 x 10(15) cm(-2) in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an f(T)/f(max) ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.

Place, publisher, year, edition, pages
2012. Vol. 33, no 4, 510-512 p.
Keyword [en]
InAs/AlSb high-electron-mobility transistor, ion implantation, low power, MMIC
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-94049DOI: 10.1109/LED.2012.2185480ISI: 000302232900015Scopus ID: 2-s2.0-84859217969OAI: oai:DiVA.org:kth-94049DiVA: diva2:525427
Funder
Swedish Research Council, 621-2009-4818
Note
QC 20120508Available from: 2012-05-08 Created: 2012-05-07 Last updated: 2017-12-07Bibliographically approved

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Hallén, Anders

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