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Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2012 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 159, no 5, H478-H481 p.Article in journal (Refereed) Published
Abstract [en]

Low temperature epitaxy (LTE) in Chemical Vapor Deposition (CVD) refers to 350-650 degrees C interval. This temperature range is critical for this process since the thermal and lattice mismatch (or strain relaxation) issues diminish in advanced BiCMOS processing. The modeling of the epitaxy process is a vital task to increase the understanding the growth process and to design any desired device structure. In this study, an empirical model for Si2H6/Ge2H6-based LTE of SiGe is developed and compared with experimental work. The model can predict the number of free sites on Si surface, growth rate of Si and SiGe, and the Ge content at low temperatures. A good agreement between the model and the experimental data is obtained.

Place, publisher, year, edition, pages
2012. Vol. 159, no 5, H478-H481 p.
Keyword [en]
Bi-CMOS, Device structures, Disilanes, Empirical model, Experimental data, Ge content, Growth process, Kinetic modeling, Low temperature epitaxies, Low temperatures, Si surfaces, Temperature range
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-95132DOI: 10.1149/2.jes113689ISI: 000302211800059Scopus ID: 2-s2.0-84859327130OAI: oai:DiVA.org:kth-95132DiVA: diva2:526746
Funder
StandUp
Note

QC 20120515

Available from: 2012-05-15 Created: 2012-05-14 Last updated: 2017-12-07Bibliographically approved
In thesis
1. Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications
Open this publication in new window or tab >>Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications
2015 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis presents SiGe(C)/Si(C) multi quantum well (MQW) layers individually or in combination with Si(C) Schottky diodes as material structures to detect infrared (IR) radiation. The performance of devices was investigated in terms of SiGe/Si periodicity and quality of SiGe/Si interface. The structures were grown by chemical vapour deposition using GeH4 and SiH4 sources at 650 °C and processed into pixel arrays with sizes of 25×25, 100×100 and 200×200 μm2. The device response to thermal variations was expressed by temperature coefficient of resistance (TCR) and the signal-to-noise-ratio was evaluated by noise measurements. The strain relaxation in SiGe layers was investigated by implementing oxygen at the interface of SiGe/Si or during SiGe growth. A minor amount of 10 ppb oxygen at the interface can be detected by noise measurements while the material characterizations could reveal defects for significantly higher defect density. Oxygen and water contaminations should be accounted for in low temperature epitaxy (350-650 °C) of the layers. Furthermore, an empirical model was developed to describe the kinetics of the SiGe growth using Si2H6 and Ge2H6 as precursors at low temperature. The model takes into account the energy for dissociation of gas molecules, diffusion of the molecules from the gas boundaries toward the substrate and the incorporation of absorbed molecules. A good consistency was observed between the experimental and calculated data.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xv, 48 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2015:01
National Category
Nano Technology
Identifiers
urn:nbn:se:kth:diva-159762 (URN)978-91-7595-422-6 (ISBN)
Presentation
2015-02-12, Sal/Hall A, KTH- Electrum, Kista, Stockholm, 10:00 (English)
Opponent
Supervisors
Note

QC 20150211

Available from: 2015-02-11 Created: 2015-02-10 Last updated: 2015-02-11Bibliographically approved

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Salemi, Arash

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