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Anodic Nb2O5 Nonvolatile RRAM
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Condensed Matter Physics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Condensed Matter Physics)
2012 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 59, no 4, 1144-1148 p.Article in journal (Refereed) Published
Abstract [en]

We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric Nb2O5 films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer. After the electroforming process, Au/Nb2O5/Nb/Si sandwich memory cells demonstrate reproducible direct current and pulse mode switching between two resistance states with a resistance ON-OFF ratio around 10(3). Low and high resististive states show ohmic conductivity and field-assisted Poole-Frenkel-type conductivity, respectively. Nonvolatile resistance storage was traced within 40 days to quantify retention characteristics of the Nb2O5 memristor. The low-temperature anodic oxidation of Nb was found to be feasible to fabricate high-density cross-point memory with 3-D stack structures.

Place, publisher, year, edition, pages
2012. Vol. 59, no 4, 1144-1148 p.
Keyword [en]
Conduction mechanism, dielectric film, impedance spectroscopy, memristor, niobium pentoxide, retention characteristics, unipolar resistance switching
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-95112DOI: 10.1109/TED.2011.2182515ISI: 000302083800037Scopus ID: 2-s2.0-84859211968OAI: oai:DiVA.org:kth-95112DiVA: diva2:526860
Note
QC 20120515Available from: 2012-05-15 Created: 2012-05-14 Last updated: 2017-12-07Bibliographically approved

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Kundozerova, Tatyana V.Grishin, Alexander M.
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