Anodic Nb2O5 Nonvolatile RRAM
2012 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 59, no 4, 1144-1148 p.Article in journal (Refereed) Published
We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric Nb2O5 films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer. After the electroforming process, Au/Nb2O5/Nb/Si sandwich memory cells demonstrate reproducible direct current and pulse mode switching between two resistance states with a resistance ON-OFF ratio around 10(3). Low and high resististive states show ohmic conductivity and field-assisted Poole-Frenkel-type conductivity, respectively. Nonvolatile resistance storage was traced within 40 days to quantify retention characteristics of the Nb2O5 memristor. The low-temperature anodic oxidation of Nb was found to be feasible to fabricate high-density cross-point memory with 3-D stack structures.
Place, publisher, year, edition, pages
2012. Vol. 59, no 4, 1144-1148 p.
Conduction mechanism, dielectric film, impedance spectroscopy, memristor, niobium pentoxide, retention characteristics, unipolar resistance switching
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-95112DOI: 10.1109/TED.2011.2182515ISI: 000302083800037ScopusID: 2-s2.0-84859211968OAI: oai:DiVA.org:kth-95112DiVA: diva2:526860
QC 201205152012-05-152012-05-142012-05-15Bibliographically approved