Investigation of Current Gain Degradation in 4H-SiC Power BJTs
2012 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 717-720, 1131-1134 p.Article in journal (Refereed) Published
The current gain degradation of 4H-SiC BJTs with no significant drift of the on-resistance is investigated. Electrical stress on devices with different emitter widths suggests that the device design can influence the degradation behavior. Analysis of the base current extrapolated from the Gummel plot indicates that the reduction of the carrier lifetime in the base region could be the cause for the degradation of the gain. However, analysis of the base current of the base-emitter diode shows that the degradation of the passivation layer could also influence the reduction of the current gain.
Place, publisher, year, edition, pages
2012. Vol. 717-720, 1131-1134 p.
4H-SiC, BJT, degradation, current gain, temperature
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-95318DOI: 10.4028/www.scientific.net/MSF.717-720.1131ISI: 000309431000270ScopusID: 2-s2.0-84861349620OAI: oai:DiVA.org:kth-95318DiVA: diva2:527735
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
QC 201205222012-05-222012-05-222016-04-26Bibliographically approved