Vertical Graphene Base Transistor
2012 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 5, 691-693 p.Article in journal (Refereed) Published
We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.
Place, publisher, year, edition, pages
2012. Vol. 33, no 5, 691-693 p.
Graphene, hot-electron transistor (HET), radio frequency (RF)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-95237DOI: 10.1109/LED.2012.2189193ISI: 000303322500021ScopusID: 2-s2.0-84860383292OAI: oai:DiVA.org:kth-95237DiVA: diva2:528416
FunderEU, European Research Council, 228229StandUp
QC 201205252012-05-252012-05-212013-04-16Bibliographically approved