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Vertical Graphene Base Transistor
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2012 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 5, 691-693 p.Article in journal (Refereed) Published
Abstract [en]

We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.

Place, publisher, year, edition, pages
2012. Vol. 33, no 5, 691-693 p.
Keyword [en]
Graphene, hot-electron transistor (HET), radio frequency (RF)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-95237DOI: 10.1109/LED.2012.2189193ISI: 000303322500021Scopus ID: 2-s2.0-84860383292OAI: oai:DiVA.org:kth-95237DiVA: diva2:528416
Funder
EU, European Research Council, 228229StandUp
Note

QC 20120525

Available from: 2012-05-25 Created: 2012-05-21 Last updated: 2017-12-07Bibliographically approved

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Lemme, Max C.Östling, Mikael
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