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Heteroepitaxy and selective area heteroepitaxy for silicon photonics
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-0977-2598
2012 (English)In: Current opinion in solid state & materials science, ISSN 1359-0286, Vol. 16, no 2, 91-99 p.Article, review/survey (Refereed) Published
Abstract [en]

This article reviews the major achievements in recent years on heteroepitaxy and selective area heteroepitaxy that are relevant to silicon photonics. Material aspects are given due importance without trying to cover all kinds of devices. Under heteroepitaxy several systems based on GaAs, InP and GaSb and their related materials and dilute III-nitrides all on Si substrates are covered and assessed. Quantum dot and quantum well lasers are taken as device examples. The potential of the emerging SnGeSi/Si system is highlighted. Under selective area heteroepitaxy, growth of InP from SiO2 trenches in Si and epitaxial lateral overgrowth of InP on silicon are exemplified as the potential routes for monolithic integration on silicon. The expected trends and anticipated advances are indicated.

Place, publisher, year, edition, pages
2012. Vol. 16, no 2, 91-99 p.
Keyword [en]
Heteroepitaxy, Selective area growth, Selective area heteroepitaxy, III-V on Si, SiGeSn on Si, Epitaxial lateral overgrowth, Silicon photonics, Monolithic integration
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-96734DOI: 10.1016/j.cossms.2012.01.003ISI: 000303975500007ScopusID: 2-s2.0-84860202099OAI: diva2:532940
Swedish Research Council
QC 20120612Available from: 2012-06-12 Created: 2012-06-11 Last updated: 2012-06-12Bibliographically approved

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