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Utility of reactively sputtered CuNx films in spintronics devices
KTH, School of Information and Communication Technology (ICT), Material Physics.
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2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 7, 073912- p.Article in journal (Refereed) Published
Abstract [en]

We have studied nitrified copper (CuNx) thin films grown by reactive sputtering in the context of spintronic devices. The Ar-to-N-2 flow ratio enables tunability of the electrical resistivity and surface roughness of the CuNx films, with the former increasing to nearly 20 times that of Cu, and the latter reduced to the atomic scale. Incorporating this into a Ta/CuNx/Ta seed stack for spin valves improves the current-in-plane (CIP) magnetoresistance; maximum magnetoresistance results with CuNx seed layer and Cu interlayer. Finally, finite element modeling results are presented that suggest the use of CuNx in nanocontact spin torque oscillators can enhance current densities by limiting the current spread through the device. This may positively impact threshold currents, power requirements, and device reliability.

Place, publisher, year, edition, pages
2012. Vol. 111, no 7, 073912- p.
Keyword [en]
Magnetic Multilayers, Tunnel-Junctions, Co/Cu/Co Pillars, Spin-Waves, Magnetoresistance, Oscillators, Excitation, Exchange, Emission, Cu3n
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-96737DOI: 10.1063/1.3703067ISI: 000303282402114Scopus ID: 2-s2.0-84861751810OAI: oai:DiVA.org:kth-96737DiVA: diva2:532954
Funder
Swedish Research CouncilKnut and Alice Wallenberg Foundation
Note
QC 20120612Available from: 2012-06-12 Created: 2012-06-11 Last updated: 2017-12-07Bibliographically approved

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