Photoexcited carrier dynamics in AlInN/GaN heterostructures
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 24, 242104- p.Article in journal (Refereed) Published
Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructures have been examined by time-resolved and scanning near-field photoluminescence (PL) spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times indicate efficient photoexcited hole transfer from AlInN to GaN via sub-band-gap states. These states are attributed to extended defects and In clusters. Near-field PL scans show that diameter of the localization sites and the distance between them are below 100 nm. Spatial variations of the GaN PL wavelength have been assigned to the electric field inhomogeneities at the heterostructure interface.
Place, publisher, year, edition, pages
2012. Vol. 100, no 24, 242104- p.
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-98936DOI: 10.1063/1.4729033ISI: 000305269200033ScopusID: 2-s2.0-84863330168OAI: oai:DiVA.org:kth-98936DiVA: diva2:540745
FunderSwedish Research CouncilKnut and Alice Wallenberg Foundation
QC 201207112012-07-112012-07-052012-11-01Bibliographically approved