Evaluation of junction termination for silicon X-ray detectors
2011 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, Vol. 648, S68-S71 p.Article in journal (Refereed) Published
Junction terminations intended for silicon strip X-ray detectors were evaluated experimentally and with simulations, with respect to their tolerance to radiation-induced surface charge. The terminations were designed with an inner guard ring biased to the same potential as the active anode and multiple p+-doped rings with metallic field plates at floating potential. Two designs, one with 9 and one with 14 floating rings were evaluated and applied to simple non-segmented test diodes. The test diodes were irradiated with X-rays to 72-74 kGy, the surface charge was determined from capaciatance-voltage measurements, and reverse breakdown voltage was determined from I-V-curves. Both simulations and experiments showed superior performance of the 14-ring design. The experimentally determined surface charge density after irradiation was in the order of +5 x 10(11) cm(-2), and the breakdown voltages were similar to 900 and 1600 V for the 9-ring and 14-ring termination, respectively.
Place, publisher, year, edition, pages
2011. Vol. 648, S68-S71 p.
Junction termination, Floating ring, Field plate, Surface charge, X-ray detector
IdentifiersURN: urn:nbn:se:kth:diva-99118DOI: 10.1016/j.nima.2010.12.152ISI: 000305376900019ScopusID: 2-s2.0-79960843858OAI: oai:DiVA.org:kth-99118DiVA: diva2:541279
QC 201207162012-07-162012-07-132012-08-07Bibliographically approved