In situ SiOx interfacial layer formation for scaled ALD high-k/metal gate stacks
2012 (English)In: 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012, IEEE , 2012, 105-108 p.Conference paper (Refereed)
This work addresses the issue of interfacial layer formation in scaled high-k/metal gate stacks: the possibility of growing a thin SiOx interfacial layer in situ in a commercial ALD reactor has been evaluated, employing ozone-based Si oxidation. Three techniques (O3, O3/H2O and Pulsed) have been developed to grow scaled sub-nm interfacial layers and have been integrated in MOS capacitors and MOSFETs. A comparison based on electrical characterization shows that the performance of the proposed in situ methods is comparable or superior to that of existing ex situ techniques; specifically, the O3 method can grow aggressively scaled interfacial layers (4-5 A) while preserving the electrical quality of the stack.
Place, publisher, year, edition, pages
IEEE , 2012. 105-108 p.
ALD, high-k, IL, ozone, SiOx
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100024DOI: 10.1109/ULIS.2012.6193368ScopusID: 2-s2.0-84861208486ISBN: 978-146730191-6OAI: oai:DiVA.org:kth-100024DiVA: diva2:542854
2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012; Grenoble; 6 March 2012 through 7 March 2012
FunderEU, European Research Council
QC 201208032012-08-032012-08-032015-07-06Bibliographically approved