Strain engineering in suspended graphene devices for pressure sensor applications
2012 (English)In: 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012, IEEE , 2012, 21-24 p.Conference paper (Refereed)
The present paper describes a device structure for controlling and measuring strain in graphene membranes. We propose to induce strain by creating a pressure difference between the inside and the outside of a cavity covered with a graphene membrane. The combination of tight-binding calculations and a COMSOL model predicts strain induced band gaps in graphene for certain conditions and provides a guideline for potential device layouts. Raman spectroscopy on fabricated devices indicates the feasibility of this approach. Ultimately, pressure-induced band structure changes could be detected electrically, suggesting an application as ultra-sensitive pressure sensors.
Place, publisher, year, edition, pages
IEEE , 2012. 21-24 p.
device, graphene, membrane, Raman, strain
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100023DOI: 10.1109/ULIS.2012.6193347ScopusID: 2-s2.0-84861211414ISBN: 978-146730191-6OAI: oai:DiVA.org:kth-100023DiVA: diva2:543090
2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012; Grenoble;6 March 2012 through 7 March 2012
FunderSwedish e‐Science Research CenterStandUp
QC 201208062012-08-062012-08-032016-06-10Bibliographically approved